DIMENSIONS ARE IN MILLIMETERS.
Note:1. Dimension shown in ( ) is
reference values.
娉級錛?錛堚€冿級鍐呭娉曘伅鍙傝€冨€ゃ仺銇欍倠銆?/div>
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25擄C unless otherwise specified)
Symbol
Ratings
Unit
V
V
DS
150
V
V
DSX *5
120
A
Continuous drain current
I
D
鹵40
A
Pulsed drain current
I
D(puls]
鹵160
V
Gate-source voltage
V
GS
鹵30
A
Non-repetitive Avalanche current I
AS *2
40
mJ
Maximum Avalanche Energy
E
AS *1
387
kV/碌s
Maximum Drain-Source dV/dt
dV
DS
/dt
*4
20
Peak Diode Recovery dV/dt
dV/dt
*3
5
kV/碌s
擄C
Max. power dissipation
P
D
Ta=25
2.4 **
W
擄C
Tc=25
135
Operating and storage
T
ch
+150
擄C
-55 to +150
temperature range
T
stg
擄C
** Surface mounted on 1000mm
2
, t=1.6mm FR-4 PCB(Drain pad area : 500mm
2
)
*1 L=335碌H, Vcc=48V
*2 Tch< 150擄C *3 I
F
< -I
D
, -di/dt=50A/碌s, Vcc < BV
DSS
, Tch < 150擄C
=
=
=
=
*4 V
DS
< 150V *5 V
GS
=-30V
=
Item
Drain-source voltage
琛ㄧず鍐呭
鍟嗘
Special
specification
for customer
CONNECTION
11 G : : Gate
G Gate
緄愮窔鍥?/div>
S1 : : Source1
22 S1 Source1
33 S2 : : Source2
S2 Source2
44 D : : Drain
G
D Drain
S1
S2
D
鐗規(guī)畩鍝佽鍙?/div>
Lot No.
銉儍銉圢o.
Type name
錕?frac12;錕藉悕
Equivalent circuit schematic
D : Drain
G : Gate
S1 : Source
S2 : Source
Electrical characteristics (T
c
=25擄C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
= 250碌A(chǔ)
V
GS
=0V
I
D
= 250碌A(chǔ)
V
DS
=V
GS
V
DS
=150V V
GS
=0V
V
DS
=120V V
GS
=0V
V
GS
=鹵30V V
DS
=0V
I
D
=20A V
GS
=10V
I
D
=20A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=48V I
D
=20A
V
GS
=10V
R
GS
=10
鈩?/div>
V
CC
=75V
I
D
=40A
V
GS
=10V
L=100碌H T
ch
=25擄C
I
F
=40A V
GS
=0V T
ch
=25擄C
I
F
=40A V
GS
=0V
-di/dt=100A/碌s T
ch
=25擄C
T
ch
=25擄C
T
ch
=125擄C
10
31
26
1940
310
24
20
26
50
20
52
15
18
1.10
0.14
0.77
Min.
150
3.0
Typ.
Max.
5.0
25
250
100
41
2910
465
36
30
39
75
30
78
22.5
27
1.65
Units
V
V
碌A(chǔ)
nA
m鈩?/div>
S
pF
13
ns
nC
40
A
V
碌s
碌C
Thermalcharacteristics
Symbol
Test Conditions
R
th(ch-c)
channel to case
Thermal resistance
R
th(ch-a)
channel to ambient
R
th(ch-a) **
channel to ambient
2
** Surface mounted on 1000mm , t=1.6mm FR-4 PCB(Drain pad area : 500mm
2
)
Item
Min.
Typ.
Max.
0.926
87.0
52.0
Units
擄C/W
擄C/W
擄C/W
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