2SK3586-01
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
(mm)
TO-220AB
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25擄C unless otherwise specified)
Symbol
Ratings
Unit
V
V
DS
100
V
V
DSX *5
70
A
Continuous drain current
I
D
鹵50
A
Pulsed drain current
I
D(puls]
鹵200
V
Gate-source voltage
V
GS
鹵30
A
Non-repetitive Avalanche current I
AS *2
50
mJ
Maximum Avalanche Energy
E
AS *1
465
kV/碌s
Maximum Drain-Source dV/dt
dV
DS
/dt
*4
20
Peak Diode Recovery dV/dt
dV/dt
*3
5
kV/碌s
擄C
Max. power dissipation
P
D
Ta=25
2.02
W
擄C
Tc=25
135
Operating and storage
T
ch
+150
擄C
-55 to +150
temperature range
T
stg
擄C
< 150擄C *3 I
F
< -I
D
, -di/dt=50A/碌s, Vcc < BV
DSS
, Tch < 150擄C
*1 L=223碌H, Vcc=48V
*2 Tch=
=
=
=
*4 V
DS
<100V
*5 V
GS
=-30V
=
Item
Drain-source voltage
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (T
c
=25擄C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
= 250碌A(chǔ)
V
GS
=0V
I
D
= 250碌A(chǔ)
V
DS
=V
GS
T
ch
=25擄C
V
DS
=100V V
GS
=0V
T
ch
=125擄C
V
DS
=80V V
GS
=0V
V
GS
=鹵30V V
DS
=0V
I
D
=25A V
GS
=10V
I
D
=25A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=48V I
D
=25A
V
GS
=10V
R
GS
=10
鈩?/div>
V
CC
=50V
I
D
=50A
V
GS
=10V
L=100碌H T
ch
=25擄C
I
F
=50A V
GS
=0V T
ch
=25擄C
I
F
=50A V
GS
=0V
-di/dt=100A/碌s T
ch
=25擄C
Min.
100
3.0
Typ.
Max.
5.0
25
250
100
25
2745
690
57
30
53
75
35
78
24
27
1.65
Units
V
V
碌A(chǔ)
nA
m鈩?/div>
S
pF
15
10
19
30
1830
460
38
20
35
50
23
52
16
18
1.10
0.1
0.4
ns
nC
50
A
V
碌s
碌C
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
0.926
62.0
Units
擄C/W
擄C/W
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