0.15 min.
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Drain-source ON resistance
Symbol
V
DSS
I
DSS
I
GSS
V
th
R
DS(on)
錚
fs
錚?/div>
C
iss
C
oss
C
rss
t
on
t
off
Conditions
I
D
=
10
碌A(chǔ),
V
GS
=
0
V
DS
=
50 V, V
GS
=
0
V
GS
= 鹵7
V, V
DS
=
0
I
D
=
1.0
碌A(chǔ),
V
DS
=
3 V
I
D
=
10 mA, V
GS
=
2.5 V
I
D
=
10 mA, V
GS
=
4.0 V
Forward transfer admittance
Short-circuit forward transfer capacitance
(Common-source)
Short-circuit output capacitance
(Common-source)
Reverse transfer capacitance (Common-source)
Turn-on time
*
Turn-off time
*
I
D
=
10 mA, V
DS
=
3 V, f
=
1 kHz
V
DS
=
3 V, V
GS
=
0, f
=
1 MHz
V
DS
=
3 V, V
GS
=
0, f
=
1 MHz
V
DS
=
3 V, V
GS
=
0, f
=
1 MHz
V
DD
=
3 V, V
GS
=
0 V to 3 V, R
L
=
470
鈩?/div>
V
DD
=
3 V, V
GS
=
3 V to 0 V, R
L
=
470
鈩?/div>
20
0.9
1.2
8
6
60
12
7
3
200
200
Min
50
1.0
鹵5.0
1.5
15
12
mS
pF
pF
pF
ns
ns
Typ
Max
Unit
V
碌A(chǔ)
碌A(chǔ)
V
鈩?/div>
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: t
on
, t
off
test circuit
V
OUT
470
鈩?/div>
V
IN
V
DD
=
3 V
V
OUT
10%
10%
90%
t
on
Publication date: July 2003
SJF00038AED
90%
50
鈩?/div>
100
碌F
V
GS
=
3.0 V
t
off
0.15 max.
0.15 min.
0.80
鹵0.05
1.20
鹵0.05
1
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