2SK3535-01
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
Applications
for Switching
Foot Print Pattern
Absolute Maximum Ratings at
Tc=25擄C
( unless otherwise specified)
Unit
Remarks
V
V
GS
=30V
V
A
Continuous drain current
Ta=25擄C
A
A
Pulsed drain current
I
D(puls]
V
Gate-source voltage
V
GS
A
Repetitive or non-repetitive
I
AR *2
mJ
Maximum Avalanche Energy
E
AS *1
V
DS
<250V
kV/碌s
Maximum Drain-Source dV/dt
dV
DS
/dt
=
kV/碌s
Peak Diode Recovery dV/dt
dV/dt
*3
Ta=25擄C
Max. power dissipation
P
D
W
W
Operating and storage
T
ch
擄C
temperature range
T
stg
擄C
*1 L=0.67mH, Vcc=48V *2 Tch <150擄C *3 I
F
< -I
D
, -di/dt=50A/碌s, Vcc < BV
DSS
, Tch < 150擄C
=
=
=
=
*4 Surface mounted on 1000mm
2
, t=1.6mm FR-4 PCB(Drain pad area:500mm
2
)
Item
Drain-source voltage
Symbol
V
DS
V
DSX
I
D
Ratings
250
220
鹵25
鹵3.4
*4
鹵100
鹵30
25
372
20
5
2.4
*4
135
+150
-55 to +150
Equivalent circuit schematic
(4) Drain(D)
(1) Gate(G)
(2) Source(S)
[signal line]
(3) Source(S)
[power line]
Electrical characteristics atT
c
=25擄C ( unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
=250碌A(chǔ)
V
GS
=0V
I
D
= 250碌A(chǔ)
V
DS
=V
GS
V
DS
=250V
V
DS
=200V
V
GS
=鹵30V
I
D
=12.5A
V
GS
=0V
V
GS
=0V
V
DS
=0V
V
GS
=10V
T
ch
=25擄C
T
ch
=125擄C
10
75
16
2000
400
25
20
30
60
20
44
14
16
1.10
0.45
1.5
Min.
250
3.0
Typ.
Max.
5.0
25
250
100
100
3000
600
38
30
45
90
30
66
21
24
1.65
Units
V
V
碌A(chǔ)
nA
m鈩?/div>
S
pF
I
D
=12.5A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=72V I
D
=12.5A
V
GS
=10V
R
GS
=10
鈩?/div>
V
CC
=72V
I
D
=25A
V
GS
=10V
L=100 碌H T
ch
=25擄C
I
F
=25A V
GS
=0V T
ch
=25擄C
I
F
=25A V
GS
=0V
-di/dt=100A/碌s T
ch
=25擄C
8
ns
nC
25
A
V
碌s
碌C
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
channel to ambient
Min.
Typ.
Max.
0.93
87.0
52.0
Units
擄C/W
擄C/W
擄C/W
*4
1
1
2
3
4
