2SK3532-01MR
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F
200304
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25擄C unless otherwise specified)
Ratings
Unit
V
900
V
900
Equivalent
A
Continuous drain current
鹵6
A
Pulsed drain current
鹵24
V
Gate-source voltage
鹵30
A
Repetitive or non-repetitive
6
mJ
Maximum Avalanche Energy
244
kV/碌s
Maximum Drain-Source dV/dt
40
Peak Diode Recovery dV/dt
5
kV/碌s
Gate(G)
Max. power dissipation
2.16
W
70
Operating and storage
T
ch
+150
擄C
-55 to +150
temperature range
T
stg
擄C
Isolation Voltage
V
ISO
*6
2
kVrms
*1 L=12.4mH, Vcc=90V, Tch=25擄C See to Avalanche Energy Graph *2 Tch <150擄C
=
*3 I
F
< -I
D
, -di/dt=50A/碌s, Vcc < BV
DSS
, Tch < 150擄C *4 VDS< 900V *5 V
GS
=-30V *6 t=60sec, f=60Hz
=
=
=
=
Item
Drain-source voltage
Symbol
V
DS
V
DSX *5
I
D
I
D(puls]
V
GS
I
AR
*2
E
AS
*1
dV
DS
/dt
*4
dV/dt
*3
P
D
Ta=25擄C
Tc=25擄C
circuit schematic
Drain(D)
Source(S)
Electrical characteristics (T
c
=25擄C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
= 250碌A
V
GS
=0V
I
D
= 250碌A
V
DS
=V
GS
V
DS
=900V V
GS
=0V
T
ch
=25擄C
V
DS
=720V V
GS
=0V
T
ch
=125擄C
V
GS
=鹵30V V
DS
=0V
I
D
=3A V
GS
=10V
I
D
=3A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=600V I
D
=3A
V
GS
=10V
R
GS
=10
鈩?/div>
V
CC
=450V
I
D
=6A
V
GS
=10V
L=12.4mH T
ch
=25擄C
I
F
=6A V
GS
=0V T
ch
=25擄C
I
F
=6A V
GS
=0V
-di/dt=100A/碌s T
ch
=25擄C
Min.
900
3.0
Typ.
Max.
5.0
25
250
100
2.50
1125
150
11
32
12
63
16.5
32
4.5
10.5
1.50
Units
V
V
碌A
nA
鈩?/div>
S
pF
3.7
1.92
7.4
750
100
7
21
8
42
11
21.5
3
7
0.90
1.1
5.5
ns
nC
6
A
V
碌s
碌C
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
1.560
58.0
Units
擄C/W
擄C/W
1
1
2
3
4
