2SK3520-01MR
FUJI POWER MOSFET
2SK3520-01MR
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
TO-220F
10
1
Transient Thermal Impedance
Zth(ch-c)=f(t):D=t/T
D=0.5
10
0
0.2
0.1
0.05
Zth(ch-c) [ C/W]
o
10
-1
0.02
0.01
t
Applications
Switching regulators
D=
T
t
T
10
-2
0
UPS (Uninterruptible Power Supply)
DC-DC converters
10
-3
Maximum ratings and characteristic
Absolute maximum ratings
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
(Tc=25擄C unless otherwise specified)
Symbol
Ratings
Unit
V
V
DS
500
A
I
D
鹵8
A
I
D(puls]
鹵32
V
V
GS
鹵30
A
I
AR
*2
8
mJ
E
AS
*1
173
kV/碌s
dV
DS
/dt
*4
20
dV/dt
*3
5
kV/碌s
擄C
P
D
Ta=25
2.16
W
擄C
Tc=25
35
Operating and storage
T
ch
+150
擄C
-55 to +150
temperature range
T
stg
擄C
< BV
DSS
, Tch < 150擄C
*1 L=4.98mH, Vcc=50V *2 Tch<150擄C *3 I
F
< -I
D
, -di/dt=50A/碌s, Vcc =
=
=
=
*4 VDS < 500V
=
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
t [sec]
Equivalent circuit schematic
Drain(D)
10
2
Maximum Avalanche Current Pulsewidth
I
AV
=f(t
AV
):starting Tch=25擄C. Vcc=50V
Avalanche current I
AV
[A]
10
1
Single Pulse
Gate(G)
Source(S)
10
0
10
-1
Electrical characteristics (T
c
=25擄C unless otherwise specified)
-2
10
-8
10
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
= 250碌A(chǔ)
V
GS
=0V
I
D
= 250碌A(chǔ)
V
DS
=V
GS
V
DS
=500V V
GS
=0V
V
DS
=400V V
GS
=0V
V
GS
=鹵30V V
DS
=0V
I
D
=4A V
GS
=10V
I
D
=4A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=300V I
D
=4A
V
GS
=10V
R
GS
=10
鈩?/div>
V
CC
=250V
I
D
=8A
V
GS
=10V
L=4.98mH T
ch
=25擄C
I
F
=8A V
GS
=0V T
ch
=25擄C
I
F
=8A V
GS
=0V
-di/dt=100A/碌s T
ch
=25擄C
T
ch
=25擄C
T
ch
=125擄C
Min.
500
3.0
Typ.
Max.
5.0
25
250
100
0.85
1130
150
6.0
21
14
36
9
30
13
8.5
1.50
Units
V
V
碌A(chǔ)
nA
鈩?/div>
S
pF
t
AV
[sec]
3.5
10
0.65
7
750
100
4.0
14
9
24
6
20
8.5
5.5
1.00
0.65
3.5
ns
nC
8
瀵屽＋闆繪鏍紡浼?xì)绀?/div>
鈥?/div>
闆誨瓙銈兂銉戙儖銉尖€冦儜銉兗鍗婂皫錕?frac12;錕戒簨妤儴
銆?141-0032鈥冩澅浜拷½鍝佸窛鍖哄ぇ宕庝竴涓佺洰 11 鐣紥鍙鳳紙銈層兗銉堛偡銉嗐偅澶у磶銈ゃ兗銈廣儓銈褲儻銉鹼級
鍠舵キ緄辨嫭閮ㄢ€冣劇 (03)5435-7152鈥冣€?/div>
鈥冮枹瑗挎敮紺?鍗婂皫錕?frac12;錕藉柖妤儴鈥?06)6455-6467
涓儴鏀ぞ 鍗婂皫錕?frac12;錕藉柖妤儴鈥?052)234-4482
涔?jié)宸炴敮绀?鍗婂皫錕?frac12;錕藉柖妤儴鈥?092)731-7132
URL http://www.fujielectric.co.jp/denshi/scd
A
V
碌s
碌C
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
3.57
58.0
Units
擄C/W
擄C/W
1
2SK3520-01MR相關(guān)型號PDF文件下載
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廠商
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