2SK3506
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (蟺-MOSV)
2SK3506
Relay Drive and DC-DC Converter Applications
Motor Drive Applications
路
路
路
路
Low drain-source ON resistance: R
DS (ON)
= 16 m鈩?(typ.)
High forward transfer admittance: |Y
fs
| = 26 S (typ.)
Low leakage current: I
DSS
= 100 碌A(chǔ) (max) (V
DS
= 30 V)
Enhancement-model: V
th
= 1.5 to 3.0 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kW)
Gate-source voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
30
30
鹵20
45
135
100
220
45
10
150
-55
to150
Unit
V
V
V
A
W
mJ
A
mJ
擄C
擄C
Pulse (Note 1)
Drain power dissipation (Tc
=
25擄C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-65
2-16C1B
Weight: 4.6 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
1.25
50
Unit
擄C/W
擄C/W
Note 1: Please use devices on condition that the channel temperature is below 150擄C.
Note 2: V
DD
=
25 V, T
ch
=
25擄C (initial), L
=
78
mH,
I
AR
=
45 A, R
G
=
25
W
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-09-04
1
2
3
