2SK3476
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3476
VHF- and UHF-band Amplifier Applications
Unit: mm
Output power: P
O
= 7.0 W (min)
Gain: G
P
= 11.4dB (min)
Drain efficiency:
畏
D
= 60% (min)
路
路
路
Maximum Ratings
(Ta = 25擄C)
Characteristics
Drain-source voltage
Gain-source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature range
Symbol
V
DSS
V
GSS
I
D
P
D
(Note 1)
T
ch
T
stg
Rating
20
鹵5
3
20
150
鈭?5~150
Unit
V
V
A
W
擄C
擄C
Note 1: Tc = 25擄C (When mounted on a 1.6 mm glass epoxy PCB)
JEDEC
鈥?/div>
鈥?/div>
2-5N1A
Marking
2
Type name
JEITA
TOSHIBA
1
UC
F
**
3
Dot
Lo No.
1. Gate
2. Source (heat sink)
3. Drain
Caution
Please take care to avoid generating static electricity when handling this transistor.
1
2002-01-09
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