2SK3475
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3475
VHF- and UHF-band Amplifier Applications
Unit: mm
Output power: P
O
= 630 mW (min)
Gain: G
P
= 14.9dB (min)
Drain efficiency:
畏
D
= 45% (min)
路
路
路
Maximum Ratings
(Ta = 25擄C)
Characteristics
Drain-source voltage
Gain-source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature range
Symbol
V
DSS
V
GSS
I
D
P
D
(Note 1)
T
ch
T
stg
Rating
20
鹵5
1
3
150
鈭?5~150
Unit
V
V
A
W
擄C
擄C
Note 1: Tc = 25擄C (When mounted on a 1.6 mm glass epoxy PCB)
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-62
2-5K1D
Marking
Type name
W
B
1
2
3
1. Gate
2. Source
3. Drain
Caution
Please take care to avoid generating static electricity when handling this transistor.
1
2002-01-09
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