鈥?/div>
Low drain-source ON resistance: R
DS (ON)
= 4.0 m鈩?(typ.)
High forward transfer admittance: |Y
fs
| = 0.8 S (typ.)
Low leakage current: I
DSS
=
100
碌A(chǔ) (max) (V
DS
= 450 V)
Enhancement-model: V
th
= 2.0 to 4.0 V (V
DS
=
10
V, I
D
=
1
mA)
Maximum Ratings
(Tc
=
25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 k鈩?
Gate-source voltage
Drain current
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
450
450
鹵30
1
2
20
122
1
2
150
鈭?5
to150
Unit
V
V
V
A
A
W
mJ
A
mJ
擄C
擄C
Pulse (Note 1)
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-64
2-7B1B
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
6.25
125
Unit
擄C/W
擄C/W
Note 1: Please use devices on condition that the channel temperature is below 150擄C.
Note 2: V
DD
=
90 V, T
ch
=
25擄C (initial), L
=
203 mH, R
G
=
25
鈩?
I
AR
=
1 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-03-04
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