鈩?/div>
(typ.)
High forward transfer admittance: |Y
fs
| = 0.4 S (typ.)
Low leakage current: I
DSS
= 100 碌A(chǔ) (max) (V
DS
= 500 V)
Enhancement-model: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kW)
Gate-source voltage
Drain current
Drain power dissipation
Drain power dissipation
(Note 2)
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
500
500
鹵30
0.5
1.5
0.5
1.5
14.3
0.5
0.05
150
-55
to150
Unit
V
V
V
A
W
W
Pulse (Note 1)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
JEDEC
mJ
A
mJ
擄C
擄C
鈥?/div>
SC-62
2-5K1B
JEITA
TOSHIBA
Weight: 0.05 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to ambient
Symbol
R
th (ch-a)
Max
250
Unit
擄C/W
Marking
Z
G
Note 1: Please use devices on condition that the channel temperature
is below 150擄C.
Note 2: Mounted on ceramic substrate (25.4 mm
麓
25.4 mm
麓
0.8 mm)
Note 3: V
DD
=
90 V, T
ch
=
25擄C (initial), L
=
100 mH, R
G
=
25
W,
I
AR
=
0.5 A
Note 4: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
(The two digits represent the
part number.)
1
2002-09-04
1
2
3
