鈩?/div>
(typ.)
High forward transfer admittance:
茂Y
fs
茂
= 4.0 S (typ.)
Low leakage current: I
DSS
= 100 碌A(chǔ) (max) (V
DS
= 500 V)
Enhancement-model: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
路
路
路
路
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kW)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
500
500
鹵30
5
20
50
180
5
5
150
-55
to 150
Unit
V
V
V
A
W
mJ
A
mJ
擄C
擄C
Drain power dissipation (Tc
=
25擄C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-97
2-9F1B
Weight: 0.74 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Symbol
R
th (ch-c)
Max
2.5
Unit
擄C/W
Circuit Configuration
4
Note 1: Please use devises on condition that the channel temperature
is below 150擄C.
Note 2: V
DD
=
90 V, T
ch
=
25擄C (initial), L
=
12.2 mH, R
G
=
25
W,
I
AR
=
5 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
3
1
2002-02-06
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