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2SK3445 Datasheet

  • 2SK3445

  • Switching Regulator, DC-DC Converter Applications Motor Driv...

  • 6頁(yè)

  • TOSHIBA

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2SK3445
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (蟺-MOSV)
2SK3445
Switching Regulator, DC-DC Converter Applications
Motor Drive Applications
路
路
路
路
Low drain-source ON resistance: R
DS (ON)
= 90 m鈩?(typ.)
High forward transfer admittance: |Y
fs
| =
10
S (typ.)
Low leakage current: I
DSS
=
100
碌A(chǔ) (V
DS
= 250 V)
Enhancement-mode: V
th
= 3.0 to 5.0 V (V
DS
=
10
V, I
D
=
1
mA)
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kW)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
250
250
鹵30
20
80
125
487
20
12.5
150
-55~150
Unit
V
V
V
A
W
mJ
A
mJ
擄C
擄C
Drain power dissipation (Tc
=
25擄C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-97
2-9F1B
Weight: 0.74 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Symbol
R
th (ch-c)
Max
1.00
Unit
擄C/W
Notice:
Please use the S1 pin for gate input
signal return. Make sure that the
main current flows into S2 pin.
4
Note 1: Please use devices on condition that the channel temperature
is below 150擄C.
Note 2: V
DD
=
50 V, T
ch
=
25擄C (initial), L
=
2.06 mH, I
AR
=
20 A, R
G
=
25
W
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
2
1
3
1
2002-09-04

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