鈥?/div>
Low drain-source ON resistance: R
DS (ON)
= 6.5 m鈩?(typ.)
High forward transfer admittance: |Y
fs
| = 30 S (typ.)
Low leakage current: I
DSS
=
100
碌A(chǔ) (V
DS
= 60 V)
Enhancement-mode: V
th
= 2.0 to 4.0 V (V
DS
=
10
V, I
D
=
1
mA)
Unit: mm
Maximum Ratings
(Tc
=
25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 k鈩?
Gate-source voltage
Drain current
Drain power dissipation
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
(Note 3)
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
60
60
鹵30
50
200
125
644
50
12.5
150
鈭?5
to 150
Unit
V
V
V
A
W
mJ
A
mJ
擄C
擄C
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-97
2-9F1B
Weight: 0.74 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Symbol
R
th (ch-c)
Max
1.00
Unit
擄C/W
Note 1: Please use devices on condition that the channel temperature
is below 150擄C.
Note 2: V
DD
=
50 V, T
ch
=
25擄C (initial), L
=
350
碌H,
R
G
=
25
鈩?
I
AR
=
50 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
Notice:
Please use the S1 pin for gate input
signal return. Make sure that the
main current flows into S2 pin.
4
1
2
3
1
2002-03-04
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