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2SK3432 Datasheet

  • 2SK3432

  • MOS Field Effect Transistor

  • NEC   NEC

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PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3432
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER
2SK3432
2SK3432-S
2SK3432-Z
PACKAGE
TO-220AB
TO-262
TO-220SMD
DESCRIPTION
The 2SK3432 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
鈥?/div>
Super low on-state resistance:
5
5
R
DS(on)1
= 4.0 m鈩?MAX. (V
GS
= 10 V, I
D
= 42 A)
R
DS(on)2
= 6.9 m鈩?MAX. (V
GS
= 4 V, I
D
= 42 A)
鈥?/div>
Low C
iss
: C
iss
= 9500 pF TYP.
鈥?/div>
Built-in gate protection diode
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note1
Total Power Dissipation (T
C
= 25擄C)
Total Power Dissipation (T
A
= 25擄C)
Channel Temperature
Storage Temperature
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
I
AS
E
AS
40
鹵20
鹵83
鹵332
100
1.5
150
鈥?5 to +150
69
476
V
V
A
A
W
W
擄C
擄C
A
mJ
(TO-262)
5
5
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
(TO-220SMD)
Notes 1.
PW
鈮?/div>
10
碌
s, Duty cycle
鈮?/div>
1 %
2.
Starting T
ch
= 25 擄C, R
G
= 25
鈩?
V
GS
= 20 V
鈫?/div>
0 V
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
1.25
83.3
擄C/W
擄C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14601EJ1V0DS00 (1st edition)
Date Published March 2000 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
漏
1999, 2000

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