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2SK3426 Datasheet

  • 2SK3426

  • SSSMini3-F1

  • panasonic

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Silicon Junction FETs (Small Signal)
2SK3426
Silicon N-Channel Junction
Unit: mm
For impedance conversion in low frequency
For electret capacitor microphone
I
Features
鈥?/div>
High mutual conductance g
m
鈥?/div>
Low noise voltage of NV
0.33
+0.05
鈥?.02
3
0.10
+0.05
鈥?.02
(0.40) (0.40)
0.80
鹵0.05
1.20
鹵0.05
5藲
0.15 min.
0.23
+0.05
鈥?.02
1
2
I
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Drain-source voltage
Drain-gate voltage
Drain-source current
Drain-gate current
Gate-source current
Allowable power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
DSO
V
DGO
I
DSO
I
DGO
I
GSO
P
D
T
opr
T
stg
Rating
20
20
2
2
2
100
鈭?0
to
+80
鈭?5
to
+125
Unit
V
V
mA
mA
mA
mW
擄C
擄C
0 to 0.01
0.52
鹵0.03
5藲
1: Drain
2: Source
3: Gate
SSSMini3-F1 Package
Marking Symbol: 4E
I
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Drain current
Symbol
I
D *1
I
DSS
Mutual conductance
Noise voltage
Voltage gain
g
m
NV
G
V1
G
V2
G
V3
鈭嗭＆G
V
. f錚?/div>
*2
Voltage gain difference
錚
V2
鈭?/div>
G
V1
錚?/div>
錚
V1
鈭?/div>
G
V3
錚?/div>
Conditions
V
DS
=
2.0 V, R
D
=
2.2 k鈩?/div>
鹵
1%
V
DS
=
2.0 V, R
D
=
2.2 k鈩?/div>
鹵
1%, V
GS
=
0
V
D
=
2.0 V, V
GS
=
0, f
=
1 kHz
V
D
=
2.0 V, R
D
=
2.2 k鈩?/div>
鹵
1%
C
O
=
5 pF, A-Curve
V
D
=
2.0 V, R
D
=
2.2 k鈩?/div>
鹵
1%
C
O
=
5 pF, e
G
=
10 mV, f
=
1 kHz
V
D
=
12 V, R
D
=
2.2 k鈩?/div>
鹵
1%
C
O
=
5 pF, e
G
=
10 mV, f
=
1 kHz
V
D
=
1.5 V, R
D
=
2.2 k鈩?/div>
鹵
1%
C
O
=
5 pF, e
G
=
10 mV, f
=
1 kHz
V
D
=
2.0 V, R
D
=
2.2 k鈩?/div>
鹵
1%
C
O
=
5 pF, e
G
=
10 mV, f
=
1 kHz to 70 Hz
0
0
鈭?.5
鈭?.0
鈭?.0
鈭?.0
鈭?/div>
0.5
鈭?.5
0
1.5
4.0
1.5
dB
Min
100
107
660
1 300
8
Typ
Max
330
310
碌S
碌V
dB
Unit
碌A(chǔ)
Note) *1: I
D
is assured for I
DSS
.
*2:
鈭嗭＆G
V
. f錚?is assured for AQL 0.065%. (the measurement method is used by source-grounded circuit.)
0.15 max.
0.15 min.
0.80
鹵0.05
1.20
鹵0.05
Publication date: April 2002
SJF00033AED
1

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