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2SK3397 Datasheet

  • 2SK3397

  • TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (...

  • 99.22KB

  • 3頁

  • TOSHIBA

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2SK3397
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS鈪?
2SK3397
Relay Drive and DC-DC Converter Applications
Motor Drive Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Low drain-source ON resistance: R
DS (ON)
= 4.0 m鈩?(typ.)
High forward transfer admittance:
錚碮
fs
錚?/div>
=
110
S (typ.)
Low leakage current: I
DSS
=
10
碌A(chǔ) (max) (V
DS
= 30 V)
Enhancement-model: V
th
=
1.5
to 3.0 V (V
DS
=
10
V, I
D
=
1
mA)
Unit: mm
Maximum Ratings
(Tc
=
25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 k鈩?
Gate-source voltage
Drain current
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
30
30
鹵20
70
210
125
273
70
12.5
150
鈭?5
to150
Unit
V
V
V
A
W
mJ
A
mJ
擄C
擄C
Pulse (Note 1)
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-97
2-9F1B
Weight: 0.74 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Symbol
R
th (ch-c)
Max
1.0
Unit
擄C/W
Circuit Configuration
4
1
Note 1: Please use devices on condition that the channel temperature
is below 150擄C.
Note 2: V
DD
=
25 V, T
ch
=
25擄C (initial), L
=
40
碌H,
I
AR
=
70 A,
R
G
=
25
鈩?/div>
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
3
1
2002-02-27

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