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2SK3377 Datasheet

  • 2SK3377

  • MOS Field Effect Transistor

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3377
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER
2SK3377
2SK3377-Z
PACKAGE
TO-251
TO-252
DESCRIPTION
The 2SK3377 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
鈥?/div>
Low On-state Resistance
5
5
5
R
DS(on)1
= 44 m鈩?MAX. (V
GS
= 10 V, I
D
= 10 A)
R
DS(on)2
= 78 m鈩?MAX. (V
GS
= 4.0 V, I
D
= 10 A)
鈥?/div>
Low C
iss
: C
iss
= 760 pF TYP.
鈥?/div>
Built-in Gate Protection Diode
鈥?/div>
TO-251/TO-252 package
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 擄C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
5
Drain Current (Pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
Note2
Note2
60
鹵20
鹵20
鹵50
30
1.0
150
鈥?5 to +150
15
23
V
V
A
A
W
W
擄C
擄C
A
mJ
(TO-252)
Total Power Dissipation (T
C
= 25擄C)
Total Power Dissipation (T
A
= 25擄C)
Channel Temperature
Storage Temperature
5
5
Single Avalanche Current
Single Avalanche Energy
I
AS
E
AS
Notes 1.
PW
鈮?/div>
10
碌
s, Duty cycle
鈮?/div>
1 %
2.
Starting T
ch
= 25 擄C, R
G
= 25
鈩?
V
GS
= 20 V
鈫?/div>
0 V
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
R
th(ch-C)
R
th(ch-A)
4.17
125
擄C/W
擄C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14328EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
漏
1999,2000

2SK3377 PDF文件相關型號

2SK3377-Z

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