2SK3373
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (蟺-MOSV)
2SK3373
Switching Regulator and DC-DC Converter Applications
Motor Drive Applications
路
路
路
路
Low drain-source ON resistance: R
DS (ON)
= 2.9 m鈩?(typ.)
High forward transfer admittance: |Y
fs
| =
1.7
S (typ.)
Low leakage current: I
DSS
=
100
碌A(chǔ) (max) (V
DS
= 500 V)
Enhancement-model: V
th
= 2.0 to 4.0 V (V
DS
=
10
V, I
D
=
1
mA)
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kW)
Gate-source voltage
DC
Drain current
(Note 1)
(Note 1)
Pulse (t
=
100
ms)
(Note 1)
Drain power dissipation (Tc
=
25擄C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Pulse (t
=
1 ms)
Rating
500
500
鹵30
2
5
12
20
112
2
2
150
-55
to150
W
mJ
A
mJ
擄C
擄C
A
Unit
V
V
V
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-7J1B
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
6.25
125
Unit
擄C/W
擄C/W
Note 1: Please use devices on condition that the channel temperature is below 150擄C.
Note 2: V
DD
=
90 V, T
ch
=
25擄C (initial), L
=
48.4 mH, R
G
=
25
W,
I
AR
=
2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-09-02
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