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2SK3367-Z Datasheet

  • 2SK3367-Z

  • SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

  • 8頁(yè)

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3367
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3367 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook
computers.
FEATURES
鈥?/div>
Low on-resistance
R
DS(on)1
= 9.0 m鈩?MAX. (V
GS
= 10 V, I
D
= 18 A)
R
DS(on)2
= 12.0 m鈩?MAX. (V
GS
= 4.5 V, I
D
= 18 A)
R
DS(on)3
= 14.0 m鈩?MAX. (V
GS
= 4.0 V, I
D
= 18 A)
鈥?/div>
Low C
iss
: C
iss
= 2800 pF TYP.
鈥?/div>
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
2SK3367
2SK3367-Z
PACKAGE
TO-251
TO-252
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 擄C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (Pulse)
Note
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
30
鹵20
鹵36
鹵144
40
1.0
150
鈥?5 to + 150
V
V
A
A
W
W
擄C
擄C
Total Power Dissipation (T
C
= 25 擄C)
Total Power Dissipation (T
A
= 25 擄C)
Channel Temperature
Storage Temperature
Note
PW
鈮?/div>
10
碌
s, Duty cycle
鈮?/div>
1 %
THERMAL RESISTANCE
Channel to case
Channel to ambient
R
th(ch-C)
R
th(ch-A)
3.13
125
擄C/W
擄C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14257EJ1V0DS00 (1st edition)
Date Published October 1999 NS CP(K)
Printed in Japan
漏
1999

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