2SK3302
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (蟺-MOSV)
2SK3302
Switching Regulator, DC-DC Converter Applications
Unit: mm
Low drain-source ON resistance: R
DS (ON)
= 11.5
鈩?/div>
(typ.)
High forward transfer admittance: |Y
fs
| = 0.4 S (typ.)
Low leakage current: I
DSS
= 100 碌A(chǔ) (max) (V
DS
= 500 V)
Enhancement-model: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
路
路
路
路
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kW)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
500
500
鹵30
0.5
1.5
1.3
14.3
0.5
0.13
150
-55~150
Unit
V
V
V
A
W
mJ
A
mJ
擄C
擄C
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
Weight: 1.9 g (typ.)
鈥?/div>
鈥?/div>
2-8MIB
Thermal Characteristics
Characteristics
Thermal resistance, channel to ambient
Symbol
R
th (ch-a)
Max
96.1
Unit
擄C/W
Note 1: Please use devise on condition that the channel temperature is below 150擄C.
Note 2: V
DD
=
90 V, T
ch
=
25擄C, L
=
100 mH, R
G
=
25
W,
I
AR
=
0.5 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-09-04
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