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2SK3297 Datasheet

  • 2SK3297

  • MOS FIELD EFFECT TRANSISTOR

  • 8頁(yè)

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3297
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3297 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
2SK3297
PACKAGE
Isolated TO-220
FEATURES
鈥ow
gate charge
Q
G
= 18 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 5.0 A)
鈥ate
voltage rating
鹵30
V
鈥ow
on-state resistance
R
DS(ON)
= 1.6
鈩?/div>
MAX. (V
GS
= 10 V, I
D
= 2.5 V)
鈥valanche
capability ratings
鈥solated
TO-220 package
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current(DC) (T
C
= 25擄C)
Drain Current(pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
600
鹵30
鹵5.0
鹵20
2.0
35
150
鈭?5
to +150
5.0
16.7
V
V
A
A
W
W
擄C
擄C
A
mJ
Total Power Dissipation (T
A
= 25擄C)
Total Power Dissipation (T
C
= 25擄C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
I
AS
E
AS
Single Avalanche Energy
Note2
Notes1.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1%
2.
Starting T
ch
= 25擄C, V
DD
= 150 V, R
G
= 25
鈩?/div>
, V
GS
= 20
鈫?
V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14058EJ1V0DS00 (1st edition)
Date Published November 2000 NS CP (K)
Printed in Japan
漏
1999, 2000

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