2SK3236
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3236
Switching Regulator Applications, DC-DC Converter and
Motor Drive Applications
路
路
路
路
路
4 V gate drive
Low drain-source ON resistance: R
DS (ON)
= 13.5 m鈩?(typ.)
High forward transfer admittance: |Y
fs
| = 42 S (typ.)
Low leakage current: I
DSS
= 100 碌A (max) (V
DS
= 60 V)
Enhancement-model: V
th
= 1.3~2.5 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kW)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
60
60
鹵20
35
105
30
68
35
3.0
150
-55~150
Unit
V
V
V
A
W
mJ
A
mJ
擄C
擄C
Drain power dissipation (Tc
=
25擄C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-67
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
4.16
62.5
Unit
擄C/W
擄C/W
Note 1: Please use devises on condition that the channel temperature is below 150擄C.
Note 2: V
DD
=
50 V, T
ch
=
25擄C, L
=
40
mH,
R
G
=
25
W,
I
AR
=
35 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution
1
2002-08-12
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