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2SK3230 Datasheet

  • 2SK3230

  • 2SK3230 Data Sheet | Data Sheet[01/2002]

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DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK3230
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
The 2SK3230 is suitable for converter of ECM.
PACKAGE DRAWING (Unit: mm)
0.3 鹵 0.05
0.1
+0.1
鈥?.05
FEATURES
鈥?/div>
Compact package
鈥?/div>
High forward transfer admittance
1000
碌
S TYP. (I
DSS
= 100
碌
A)
1600
碌
S TYP. (I
DSS
= 200
碌
A)
鈥?/div>
Includes diode and high resistance at G - S
1.0
1.6 鹵 0.1
0.8 鹵 0.1
G
D
S
ORDERING INFORMATION
2SK3230
SC-89 (TUSM)
0.5 鹵 0.05
1.6 鹵 0.1
PART NUMBER
PACKAGE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Drain to Source Voltage
Gate to Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Notes 1.
V
GS
= 鈥?.0 V
2.
Mounted on ceramic substrate of 3.0 cm x 0.64 mm
Remark
2
Note2
Note1
0.2
+0.1
鈥?
V
DSX
V
GDO
I
D
I
G
P
T
T
j
T
stg
20
鈥?0
10
10
200
125
鈥?5 to +125
V
V
mA
mA
mW
擄C
擄C
Source
Gate
Drain
EQUIVALENT CIRCUIT
Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D15942EJ1V0DS00 (1st edition)
Date Published January 2002 NS CP(K)
Printed in Japan
漏
2002

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