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2SK3221 Datasheet

  • 2SK3221

  • MOS Field Effect Transistor

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3221
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3221 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
2SK3211
PACKAGE
Isolated TO-220
FEATURES
鈥?/div>
Low gate charge
Q
G
= 9 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 2.0 A)
鈥?/div>
Gate voltage rating
鹵30
V
鈥?/div>
Low on-state resistance
R
DS(on)
= 4.4
鈩?/div>
MAX. (V
GS
= 10 V, I
D
= 1.0 A)
鈥?/div>
Avalanche capability ratings
鈥?/div>
Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25擄C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
600
鹵30
鹵2.0
鹵8.0
2.0
25
150
鈥?5 to +150
2.0
2.7
3.5
V
V
A
A
W
W
擄C
擄C
A
mJ
V/ns
Total Power Dissipation (T
A
= 25擄C)
Total Power Dissipation (T
C
= 25擄C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Diode Recovery dv/dt
Note2
Note2
I
AS
E
AS
dv/dt
Note3
Notes 1.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1%
2.
Starting T
ch
= 25擄C, V
DD
= 150 V, R
G
= 25
鈩?
V
GS
= 20
隆
0 V
3.
I
F
鈮?/div>
1.0 A, V
clamp
= 600 V, di/dt
鈮?/div>
100 A/
碌
s, T
A
= 25擄C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D13789EJ1V0DS00 (1st edition)
Date Published June 2002 NS CP(K)
Printed in Japan
漏
1998

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