2SK3216-01
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
FUJI POWER MOS-FET
TO-220AB
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
3. Source
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25擄C unless otherwise specified)
Item
Symbol
Drain-source voltage
V
DS
Continuous drain current
I
D
Pulsed drain current
I
D(puls]
Gate-source voltage
V
GS
Maximum Avalanche Energy
E
AV *1
Max. power dissipation Ta=25擄C P
D
Tc=25擄C P
D
Operating and storage
T
ch
temperature range
T
stg
Rating
100
鹵50
鹵200
鹵30
464
1.67
135
+150
-55 to +150
Unit
V
A
A
V
mJ
W
W
擄C
擄C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
*1 L=298碌H, Vcc=24V
Electrical characteristics (T
c
=25擄C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
=1mA
V
GS
=0V
I
D
=1mA
V
DS
=V
GS
V
DS
=100V
V
GS
=0V
V
GS
=鹵30V V
DS
=0V
I
D
=25A V
GS
=10V
I
D
=25A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=48V I
D
=50A
V
GS
=10V
R
GS
=10
鈩?/div>
L=100碌H T
ch
=25擄C
I
F
=50A V
GS
=0V T
ch
=25擄C
I
F
=50A V
GS
=0V
-di/dt=100A/碌s T
ch
=25擄C
50
0.97
150
0.80
1.46
Min.
100
2.5
Tch=25擄C
Tch=125擄C
Typ.
3.0
1
0.1
10
20
32.0
3200
760
230
23
130
110
65
Max.
3.5
100
0.5
100
25
4800
1140
345
35
195
165
100
Units
V
V
碌A(chǔ)
mA
nA
m鈩?/div>
S
pF
16.0
ns
A
V
ns
碌C
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
0.93
75.0
Units
擄C/W
擄C/W
1
1
2
3
4
