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2SK3192 Datasheet

  • 2SK3192

  • Silicon N-channel power MOSFET

  • 93.21KB

  • 4頁(yè)

  • PANASONIC

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Power MOSFETs
2SK3192
Silicon N-channel power MOSFET
Unit: mm
(0.7)
鈻?/div>
Features
鈥?/div>
Avalanche energy capability guaranteed
鈥?/div>
High-speed switching
鈥?/div>
Low ON resistance R
on
鈥?/div>
No secondary breakdown
15.0
鹵0.3
11.0
鹵0.2
5.0
鹵0.2
(3.2)
21.0
鹵0.5
蠁
3.2
鹵0.1
15.0
鹵0.2
鈻?/div>
Applications
鈥?/div>
PDP
鈥?/div>
Switching mode regulator
16.2
鹵0.5
(3.2) (2.3)
Solder Dip
2.0
鹵0.2
1.1
鹵0.1
2.0
鹵0.1
0.6
鹵0.2
鈻?/div>
Absolute Maximum Ratings
T
C
=
25擄C
Parameter
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Avalanche energy capability
*
Power dissipation
T
a
=
25擄C
Channel temperature
Storage temperature
T
ch
T
stg
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
P
D
Rating
250
鹵30
鹵30
鹵120
925
100
3
150
鈭?5
to
+150
擄C
擄C
Unit
V
V
A
A
mJ
W
5.45
鹵0.3
10.9
鹵0.5
1
2
3
1: Gate
2: Drain
3: Source
EIAJ: SC-92
TOP-3F-B1 Package
Marking Symbol: K3192
Internal Connection
D
Note) *: L
=
1.74 mH, I
L
=
30 A, V
DD
=
50 V, 1 pulse, T
a
=
25擄C
G
鈻?/div>
Electrical Characteristics
T
C
=
25擄C
鹵
3擄C
Parameter
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Short-circuit forward transfer capacitance
(Common source)
Short-circuit output capacitance
(Common source)
Reverse transfer capacitance
(Common source)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
V
DSS
I
DSS
I
GSS
V
th
R
DS(on)
錚碮
fs
錚?/div>
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=
100 V, I
D
=
15 A, R
L
=
6.7
鈩?/div>
V
GS
=
10 V
Conditions
I
D
=
1 mA, V
GS
=
0
V
DS
=
200 V, V
GS
=
0
V
GS
= 鹵30
V, V
DS
=
0
V
DS
=
10 V, I
D
=
1 mA
V
GS
=
10 V, I
D
=
15 A
V
DS
=
10 V, I
D
=
15 A
V
DS
= 10 V, V
GS
= 0, f = 1 MHz
8
2
50
15
4 200
1 600
650
45
115
330
130
Min
250
Typ
S
Max
Unit
V
碌A(chǔ)
碌A(chǔ)
V
m鈩?/div>
S
pF
pF
pF
ns
ns
ns
ns
10
鹵1
4
68
Publication date: January 2004
SJG00029BED
1

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