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2SK3130 Datasheet

  • 2SK3130

  • TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (...

  • 205.00KB

  • 6頁

  • TOSHIBA

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2SK3130
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (蟺-MOSV)
2SK3130
Switching Regulator Applications
Unit: mm
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Reverse-recovery time: t
rr
= 85 ns
Built-in high-speed flywheel diode
Low drain-source ON resistance: R
DS (ON)
= 1.12
鈩?/div>
(typ.)
High forward transfer admittance: |Y
fs
| = 5.0 S (typ.)
Low leakage current: I
DSS
= 100 碌A(chǔ) (max) (V
DS
= 600 V)
Enhancement model: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 k鈩?
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
600
600
鹵30
6
24
40
345
6
4
150
鈭?5~150
Unit
V
V
V
A
W
mJ
A
mJ
擄C
擄C
Drain power dissipation (Tc
=
25擄C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-67
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
3.125
62.5
Unit
擄C/W
擄C/W
Note 1: Ensure that the channel temperature does not exceed 150擄C.
Note 2: V
DD
=
90 V, T
ch
=
25擄C (initial), L
=
16.8 mH, R
G
=
25
鈩?
I
AR
=
6 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Please handle with caution
1
2004-07-06

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