2SK3125
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (蟺-MOSVI)
2SK3125
DC-DC Converter, Relay Drive and
Motor Drive Applications
Unit: mm
路
路
路
路
Low drain-source ON resistance: R
DS (ON)
= 5.3 m鈩?(typ.)
High forward transfer admittance: |Y
fs
| = 60 S (typ.)
Low leakage current: I
DSS
=
100
碌A(chǔ) (max) (V
DS
= 30 V)
Enhancement-model: V
th
=
1.5~3.0
V (V
DS
=
10
V, I
D
=
1
mA)
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kW)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
30
30
鹵20
70
210
150
955
70
15
150
-55~150
Unit
V
V
V
A
W
mJ
A
mJ
擄C
擄C
Drain power dissipation (Tc
=
25擄C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-16H1A
Weight: 3.65 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Symbol
R
th (ch-c)
Max
0.833
Unit
擄C/W
Note 1: Please use devices on condition that the channel temperature is below 150擄C.
Note 2: V
DD
=
25 V, T
ch
=
25擄C, L
=
140
mH,
R
G
=
25
W,
I
AR
=
70 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-08-23
next