Power F-MOS FETs
2SK3124
Silicon N-Channel Power F-MOS FET
s
Features
q
Avalanche energy capacity guaranteed
q
High-speed switching
q
No secondary breakdown
q
High electrostatic breakdown voltage
6.5鹵0.1
5.3鹵0.1
4.35鹵0.1
unit: mm
2.3鹵0.1
0.5鹵0.1
s
Applications
q
High-speed switching (switching power supply)
q
For high-frequency power amplification
7.3鹵0.1
1.8鹵0.1
2.5鹵0.1
0.8max
0.93鹵0.1
1.0鹵0.1
0.1鹵0.05
0.5鹵0.1
s
Absolute Maximum Ratings
(T
C
= 25擄C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
400
鹵20
鹵0.5
鹵1
0.25
10
1
150
鈭?5
to +150
Unit
V
V
A
A
mJ
W
擄C
擄C
0.75鹵0.1
2.3鹵0.1
4.6鹵0.1
1
2
3
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
*
1: Gate
2: Drain
3: Source
U Type Package
T
C
= 25擄C
Ta = 25擄C
L = 2mH, I
L
= 0.5A, 1 pulse
s
Electrical Characteristics
(T
C
= 25擄C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
DSF
C
oss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
V
DD
= 100V, I
D
= 0.1A
V
GS
= 10V, R
L
= 1鈩?/div>
Conditions
V
DS
= 320V, V
GS
= 0
V
GS
= 鹵20V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 10V, I
D
= 1mA
V
GS
= 10V, I
D
= 0.1A
V
DS
= 10V, I
D
= 0.1A
I
DR
= 0.1A, V
GS
= 0
48
V
DS
= 10V, V
GS
= 0, f = 1MHz
10
5
65
35
40
70
12.5
125
100
400
1
17
160
鈭?.5
3
23
min
typ
max
10
鹵1
Unit
碌A(chǔ)
碌A(chǔ)
V
V
鈩?/div>
mS
V
pF
pF
pF
ns
ns
ns
ns
擄C/W
擄C/W
Input capacitance (Common Source) C
iss
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source) C
rss
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
1.0鹵0.2
1
1
