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2SK3110 Datasheet

  • 2SK3110

  • SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

  • 8頁(yè)

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3110
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3110 is N channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
and designed for high voltage applications such as DC/DC
converter, actuator driver.
ORDERING INFORMATION
PART NUMBER
2SK3110
PACKAGE
Isolated TO-220
FEATURES
鈥ate
voltage rating
鹵30
V
鈥ow
on-state resistance
R
DS(on)
= 180 m鈩?MAX. (V
GS
= 10 V, I
D
= 7.0 A)
鈥ow
input capacitance
C
iss
= 1000 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
鈥uilt-in
gate protection diode
鈥valanche
capability rated
鈥solated
TO-220 package
ABSOLUTE MAXIMUM RATING (T
A
= 25
擄C
)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current(DC) (T
C
= 25擄C)
Drain Current(pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
200
鹵30
鹵14
鹵42
2.0
35
150
鈭?5
to +150
14
98
V
V
A
A
W
W
擄C
擄C
A
mJ
Total Power Dissipation (T
A
= 25擄C)
Total Power Dissipation (T
C
= 25擄C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Note1.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1 %
2.
Starting T
ch
= 25擄C, V
DD
= 100 V, R
G
= 25
鈩?/div>
, V
GS
= 20 V鈫? V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13333EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP (K)
Printed in Japan
The mark
5
shows major revised points.
漏
1998,1999, 2000

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