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2SK3093LS Datasheet

  • 2SK3093LS

  • N-Channel Silicon MOSFET General-Purpose Switching Device

  • 3頁

  • SANYO

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Ordering number : EN8622
2SK3093LS
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK3093LS
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
General-Purpose Switching Device
Applications
Low ON-resistance.
Low Qg.
Ultrahigh-Speed Switching Applications.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings
at Ta=25擄C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Enargy (Single Pulse) *1
Avalanche Current *2
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
PW鈮?0碌s, duty cycle鈮?%
Tc=25擄C
Conditions
Ratings
400
鹵30
3
12
2.0
20
150
--55 to +150
51.4
3
Unit
V
V
A
A
W
W
擄C
擄C
mJ
A
*1
VDD=50V, L=10mH, IAV=3A
*2
L鈮?0mH, single pulse
Electrical Characteristics
at Ta=25擄C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
錚?/div>
yfs
錚?/div>
RDS(on)
Conditions
ID=1mA, VGS=0V
VDS=320V, VGS=0V
VGS=
鹵30V,
VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=15V
Ratings
min
400
1.0
鹵100
3.0
0.7
1.4
1.8
2.3
4.0
typ
max
Unit
V
m
A
n
A
V
S
鈩?/div>
Marking : K3093
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0806QB SY IM TC-00000312 No.8622-1/3

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