鈩?/div>
(typ.)
High forward transfer admittance: |Y
fs
| = 3 S (typ.)
Low leakage current: I
DSS
= 100 碌A(chǔ) (max) (V
DS
= 600 V)
Enhancement-mode: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kW)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
600
600
鹵30
3.5
14
75
227
3.5
7.5
150
-55~150
Unit
V
V
V
A
W
mJ
A
mJ
擄C
擄C
Drain power dissipation (Tc
=
25擄C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
TO-220AB
SC-46
2-10P1B
Weight: 2.0 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
1.67
83.3
Unit
擄C/W
擄C/W
Note 1: Please use devices on condition that the channel temperature is below 150擄C.
Note 2: V
DD
=
90 V, T
ch
=
25擄C, L
=
28.8 mH, R
G
=
25
W,
I
AR
=
3.5 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-08-09