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2-2K1D
WA
1
2
Electrical Characteristics
(Ta = 25擄C)
Characteristics
Output power
Drain efficiency
Power gain
Threshold voltage
Drain cut-off current
Gate-source leakage current
Symbol
P
O
畏
D
G
P
V
th
I
DSS
I
GSS
(Note 1)
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Test Condition
V
DS
= 4.5 V, Iidle = 20 mA
(V
GS
= adjust)
f = 470 MHz, P
i
= 10dBmW
V
DS
= 4.8 V, I
D
= 0.5 mA
V
DS
= 10 V, V
GS
= 0 V
V
GS
= 5 V, V
DS
= 0 V
V
DS
= 6.5 V, f = 470 MHz,
P
i
= 10dBmW,
P
o
= 20.5dBmW (V
GS
= adjust)
VSWR LOAD 10:1 all phase
Min
20.5
50
10.5
0.25
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Typ.
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Max
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1.25
10
5
Unit
dBmW
%
dB
V
碌A(chǔ)
碌A(chǔ)
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Load mismatch
No degradation
Caution: This transistor is the electrostatic sensitive device. Please handle with caution.
Note 1: When the RF output power test fixture is used
1
2002-01-09