Silicon MOS FETs (Small Signal)
2SK3064
Silicon N-Channel MOS FET
Secondary battery pack (Li ion battery, etc.)
For switching
0.425
2.1鹵0.1
1.25鹵0.1
0.425
unit: mm
0.65
1
q
High-speed switching
q
S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
q
Low-voltage drive (V
th
:
鈭?
to 2V)
q
Low Ron
2.0鹵0.2
1.3鹵0.1
0.65
3
2
0.2
0.9鹵0.1
0 to 0.1
s
Absolute Maximum Ratings
(Ta = 25擄C)
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Ratings
30
鹵20
100
200
150
150
鈭?5
to +150
Unit
V
V
mA
mA
mW
擄C
擄C
1: Gate
2: Source
3: Drain
0.7鹵0.1
0.2鹵0.1
EIAJ: SC-70
S-Mini Type Package (3-pin)
Marking Symbol: 2D
s
Electrical Characteristics
(Ta = 25擄C)
Parameter
Drain current
Gate cut-off current
Gate threshold voltage
Forward transfer admittance
Drain to source ON-resistance
Turn-on time
Turn-off time
Symbol
I
DSS
I
GSS
V
th
| Y
fs
|
R
DS(on)
t
on
t
off
Conditions
V
DS
= 30V, V
GS
= 0
V
GS
= 鹵20V, V
DS
= 0
V
DS
= 5V, I
D
= 1碌A(chǔ)
V
DS
= 5V, I
D
= 10mA
V
DS
= 5V, I
D
= 10mA
V
DD
= 5V, V
GS
= 0 to 5V, R
L
= 200鈩?/div>
V
DD
= 5V, V
GS
= 0 to 5V, R
L
= 200鈩?/div>
1
15
30
150
35
50
min
typ
max
0.1
鹵1
2
Unit
碌A(chǔ)
碌A(chǔ)
V
mS
鈩?/div>
ns
ns
0.15
鈥?.05
+0.1
0.3
鈥?
s
Features
+0.1
1
1
2
