Power F-MOS FETs
2SK3028 (Tentative)
Silicon N-Channel Power F-MOS FET
s
Features
q
Avalanche energy capacity guaranteed
q
High-speed switching
q
Low ON-resistance
q
No secondary breakdown
q
Low-voltage drive
q
High electrostatic breakdown voltage
unit: mm
15.5鹵0.5
4.5
蠁3.2鹵0.1
10.0
3.0鹵0.3
26.5鹵0.5
18.6鹵0.5
q
Contactless relay
q
Diving circuit for a solenoid
q
Driving circuit for a motor
q
Control equipment
q
Switching power supply
2.0 1.2
5藲
4.0
2.0鹵0.2
1.1鹵0.1
2.0
5藲
5藲
0.7鹵0.1
s
Absolute Maximum Ratings
(T
C
= 25擄C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
60
鹵20
鹵100
鹵200
500
100
3
150
鈭?5
to +150
Unit
V
V
A
A
mJ
5.45鹵0.3
3.3鹵0.3
0.7鹵0.1
5.45鹵0.3
5.5鹵0.3
5藲
1
2
3
1: Gate
2: Drain
3: Source
TOP-3E Package
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
*
T
C
= 25擄C
Ta = 25擄C
Internal Connection
W
擄C
擄C
S
G
D
L = 0.1mH, I
L
= 100A, 1 pulse
s
Electrical Characteristics
(T
C
= 25擄C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)1
R
DS(on)2
| Y
fs
|
V
DSF
C
oss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
V
DD
= 30V, I
D
= 50A
V
GS
= 10V, R
L
= 0.6鈩?/div>
Conditions
V
DS
= 50V, V
GS
= 0
V
GS
= 鹵20V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 10V, I
D
= 1mA
V
GS
= 10V, I
D
= 50A
V
GS
= 4V, I
D
= 50A
V
DS
= 10V, I
D
= 50A
I
DR
= 50A, V
GS
= 0
9400
V
DS
= 10V, V
GS
= 0, f = 1MHz
3300
1800
40
280
830
2400
1.25
41.7
60
1
5
6.5
50
100
鈭?.2
2.5
7.5
10
min
typ
max
10
鹵10
Unit
碌A(chǔ)
碌A(chǔ)
V
V
m鈩?/div>
m鈩?/div>
S
V
pF
pF
pF
ns
ns
ns
ns
擄C/W
擄C/W
Input capacitance (Common Source) C
iss
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source) C
rss
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
2.0
23.4
22.0鹵0.5
s
Applications
5藲
5藲
1
1
