2SK3019_1 Datasheet

IC型號(hào)：
2SK3019_1
PDF描述：
2.5V Drive Nch MOS FET
文件大小：
85.02KB
PDF頁數(shù)：
4頁
芯片廠家：
ROHM

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2SK3019

Transistor

2.5V Drive Nch MOS FET

2SK3019

Structure

Silicon N-channel

MOSFET

External dimensions

(Unit : mm)

EMT3

1.6

0.3

(3)

0.7

0.55

0.8

(2)

(1)

0.2

0.5 0.5

1.0

0.2

0.15

Features

1) Low on-resistance.

2) Fast switching speed.

3) Low voltage drive (2.5V) makes this device ideal for

portable equipment.

4) Drive circuits can be simple.

5) Parallel use is easy.

Packaging specifications

Package

Type

Code

Basic ordering unit

(pieces)

2SK3019

Taping

3000

(1)Source

(2)Gate

(3)Drain

Abbreviated symbol : KN

Equivalent circuit

Drain

Gate

Absolute maximum ratings

(Ta=25擄C)

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Continuous

Pulsed

Total power dissipation

Channel temperature

Storage temperature

Symbol

DSS

GSS

鈭?/div>

Tch

Tstg

Limits

鹵20

鹵100

鹵400

150

鈭?5

+150

Unit

擄C

鈭?/div>

Gate

Protection

Diode

0.1Min.

Applications

Interfacing, switching (30V, 100mA)

1.6

Source

鈭桝

otection diode is included between the gate

and the source terminals to protect the diode

against static electricity when the product is in use.

Use a protection circuit when the fixed voltages

are exceeded.

鈭?

Pw鈮?0碌s, Duty cycle鈮?0%

鈭?

With each pin mounted on the recommended lands.

Thermal resistance

Parameter

Channel to ambient

鈭?/div>

With each pin mounted on the recommended lands.

Symbol

Rth(ch-a)

鈭?/div>

Limits

833

Unit

擄C

/ W

Rev.B

1/3

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2SK3019_1 Datasheet

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