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2SK3017_06 Datasheet

  • 2SK3017_06

  • Silicon N Channel MOS Type DC−DC Converter, Relay Driv...

  • 6頁

  • TOSHIBA

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2SK3017
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (蟺鈭扢OSIII)
2SK3017
DC鈭扗C Converter, Relay Drive and Motor Drive
Applications
Low drain鈭抯ource ON resistance
High forward transfer admittance
Low leakage current
Enhancement mode
: R
DS (ON)
= 1.05
鈩?/div>
(typ.)
: |Y
fs
| = 7.0 S (typ.)
Unit: mm
: I
DSS
= 100
渭A
(max) (V
DS
= 720 V)
: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings
(Ta = 25擄C)
Characteristics
Drain鈭抯ource voltage
Drain鈭抔ate voltage (R
GS
= 20 k鈩?
Gate鈭抯ource voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
900
900
鹵30
8.5
25.5
90
966
8.5
9
150
鈭?5~150
Unit
V
V
V
A
A
W
mJ
A
mJ
擄C
擄C
Pulse (Note 1)
Drain power dissipation (Tc = 25擄C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-16F1B
Weight: 5.8 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (鈥淗andling Precautions鈥?Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Symbol
R
th (ch鈭抍)
R
th (ch鈭抋)
Max
1.39
41.6
Unit
擄C / W
擄C / W
Note 1: Ensure that the channel temperature does not exceed 150擄C.
Note 2: V
DD
= 90 V, T
ch
= 25擄C (initial), L = 24.5 mH, R
G
= 25
鈩?
I
AR
= 8.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
2006-11-10

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