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2SK2981 Datasheet

  • 2SK2981

  • MOS Field Effect Transistor

  • 59.46KB

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2981
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
PACKAGE DRAWING (Unit : mm)
FEATURES
6.5 鹵0.2
5.0 鹵0.2
1.6 鹵0.2
1.5
鈥?.1
鈥?/div>
Low on-resistance
R
DS(on)1
= 27 m鈩?(MAX.) (V
GS
= 10 V, I
D
= 10 A)
R
DS(on)2
= 40 m鈩?(MAX.) (V
GS
= 4.5 V, I
D
= 10 A)
R
DS(on)3
= 50 m鈩?(MAX.) (V
GS
= 4 V, I
D
= 10 A)
鈥?/div>
Low C
iss
: C
iss
= 860 pF (TYP.)
鈥?/div>
Built-in gate protection diode
+0.2
2.3 鹵0.2
0.5 鹵0.1
4
1
2 3
1.3
MAX.
7.0
MIN.
5.5 鹵0.2
13.7
MIN.
0.6 鹵0.1
2.3 2.3
0.6 鹵0.1
ORDERING INFORMATION
PART NUMBER
2SK2981
2SK2981-Z
PACKAGE
TO-251
0.8 4.3
MAX.
1.
2.
3.
4.
Gate
Drain
Source
Fin (Drain)
TO-251(MP-3)
1.5
鈥?.1
+0.2
0.75
6.5 鹵0.2
5.0 鹵0.2
2.3 鹵0.2
0.5 鹵0.1
12.0
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 擄C)
Drain to Source Voltage (V
GS
= 0)
Gate to Source Voltage (V
DS
= 0)
Drain Current (DC)
Drain Current (Pulse)
Note
1.3
MAX.
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
30
鹵20
鹵20
鹵80
20
150
鈥?5 to + 150
V
V
A
A
W
擄C
擄C
0.9 0.8
2.3 2.3
MAX. MAX.
0.8
MIN.
1.
2.
3.
4.
Gate
Drain
Source
Fin (Drain)
TO-252(MP-3Z) (SURFACE MOUNT TYPE)
Total Power Dissipation (T
c
= 25 擄C)
Channel Temperature
Storage Temperature
Note
PW
鈮?/div>
10
碌
s, Duty cycle
鈮?/div>
1 %
EQUIVALENT CIRCUIT
Drain
0.5
1 2
3
5.5 鹵0.2
10.0 MAX.
4
1.0
MIN.
1.5
TYP.
TO-252
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice.
Document No.
D12355EJ1V0DS00 (1st edition)
Date Published December 1998 NS CP(K)
Printed in Japan
漏
1998

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