MITSUBISHI RF POWER MOS FET
2SK2975
DESCRIPTION
2SK2975 is a MOS FET type transistor specifically designed for
VHF/UHF power amplifiers applications.
OUTLINE DRAWING
INDEX MARK
(TOP)
Dimensions in mm
(BOTTOM)
FEATURES
鈥?High power gain:Gpe鈮?.4dB
@V
DD
=9.6V,f=450MHz,Pin=30dBm
鈥?High efficiency:55% typ.
鈥?Source case type seramic package
(connected internally to source)
3
4.9
1
2
2.0
3.50
t=1.2MAX
APPLICATION
For drive stage and output stage of power amplifiers in VHF/UHF
band portable radio sets.
1 : DRAIN
2 : SOURCE
3 : GATE
MARKING
INDEX
MARK
TYPE No.
LOT No.
ABSOLUTE MAXIMUM RATINGS
(T
C
=25藲C, unless otherwise noted)
Symbol
V
DSS
V
GSS
P
ch
T
j
T
stg
Parameter
Drain to source voltage
Gate to source voltage
Channel dissipation
Junction temperature
Storage temperature
Conditions
Ratings
30
鹵20
10
175
-40 to +110
Unit
V
V
W
藲C
藲C
Tc=25藲C
(Note2)
Note1: Above parameters are guaranteed independently.
2: Solder source pad on Copper Block(14脳2.8脳2mm)
ELECTRICAL CHARACTERISTICS
(T
C
=25藲C, unless otherwise noted)
Symbol
I
DSS
I
GSS
V
TH
C
iss
C
oss
P
out
h
D
Parameter
Test conditions
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=7V, I
DS
=1mA
V
GS
=10V, V
DS
=0V,f=1MHz
V
DS
=10V, V
GS
=0V,f=1MHz
V
DS
=9.6V, P
in
=1W,f=450MHz
Min
Limits
Typ
Max
10
1
1.7
Unit
碌A(chǔ)
碌A(chǔ)
V
pF
pF
W
%
Threshold voltage
1.0
45
80
8
55
7
50
Note: Above parameters,ratings,limits and conditions are subject to change.
Nov. 麓97
Mitsubishi
1
2
3
