2SK2903-01MR
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
FUJI POWER MOS-FET
TO-220F15
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
3. Source
2.54
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25擄C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Maximum Avalanche Energy
Max. power dissipation
Operating and storage
temperature range
Symbol
V
DS
I
D
I
D(puls]
V
GS
E
AV *1
P
D
T
ch
T
stg
Rating
60
鹵50
鹵200
鹵30
720.8
50
+150
-55 to +150
Unit
Equivalent circuit schematic
Drain(D)
V
A
A
V
mJ
W
擄C
擄C
*1 L=0.384mH, Vcc=24V
Gate(G)
Source(S)
Electrical characteristics (T
c
=25擄C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
=1mA
V
GS
=0V
I
D
=10mA V
DS
=V
GS
V
DS
=60V
V
GS
=0V
V
GS
=鹵30V V
DS
=0V
I
D
=40A V
GS
=10V
I
D
=40A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=30V I
D
=80A
V
GS
=10V
R
GS
=10
鈩?/div>
L=100 碌H T
ch
=25擄C
I
F
=50A V
GS
=0V T
ch
=25擄C
I
F
=50A V
GS
=0V
-di/dt=100A/碌s T
ch
=25擄C
50
1.0
70
0.13
1.5
Min.
60
2.5
T
ch
=25擄C
T
ch
=125擄C
Typ.
3.0
10
0.2
10
9.5
40
3100
1300
350
20
85
88
65
Max.
3.5
500
1.0
100
12
4650
1950
530
30
120
130
120
Units
V
V
碌A(chǔ)
mA
nA
m鈩?/div>
S
pF
20
ns
A
V
ns
碌C
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
2.5
62.5
Units
擄C/W
擄C/W
1
1
2
3
4
