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2SK2858 Datasheet

  • 2SK2858

  • N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHI...

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  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2858
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SK2858 is a switching device which can be driven directly by a
2.5-V power source.
The 2SK2858 has excellent switching characteristics, and is suitable for
use as a high-speed switching device in digital circuits.
PACKAGE DRAWING (Unit : mm)
0.3
+0.1
鈥?
2.1 鹵 0.1
1.25 鹵 0.1
0.65
0.65
鈥?/div>
Can be driven by a 2.5-V power source
鈥?/div>
Low gate cut-off voltage
1
3
0.3
Marking
0.15
+0.1
鈥?.05
PART NUMBER
2SK2858
PACKAGE
SC-70(SSP)
0.9 鹵 0.1
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
5
Note
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
30
鹵20
鹵0.1
鹵0.4
150
150
鈥?5 to +150
V
V
A
A
mW
擄C
擄C
Gate
Gate
Protection
Diode
Marking: G24
EQUIVALENT CIRCUIT
Drain
Electrode
Connection
1.Source
Internal
2.Gate
Diode
3.Drain
Total Power Dissipation
Channel Temperature
Storage Temperature
Note
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1 %
Remark
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D11706EJ2V0DS00 (2nd edition)
Date Published August 1999 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
漏
0 to 1.1
1996, 1999
0.3
+0.1
鈥?
FEATURES
2.0 鹵 0.2
2

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