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2SK2724 Datasheet

  • 2SK2724

  • MOS Field Effect Power Transistors

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
2SK2724
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
PACKAGE DIMENSIONS (in millimeter)
4.5 鹵0.2
3.2 鹵0.2
2.7 鹵0.2
10.0 鹵0.3
FEATURES
鈥?Low On-Resistance
3 鹵0.1
4 鹵0.2
12.0 鹵0.2
13.5 MIN.
R
DS(on)1
= 27 m鈩?Max. (V
GS
= 10 V, I
D
= 18 A)
R
DS(on)2
= 40 m鈩?Max. (V
GS
= 4 V, I
D
= 18 A)
鈥?Low C
iss
C
iss
=1 200 pF Typ.
鈥?Built-in G-S Protection Diode
鈥?Isolated TO-220 package
15.0 鹵0.3
0.7 鹵0.1
2.54
1.3 鹵0.2
1.5 鹵0.2
2.54
2.5 鹵0.1
0.65 鹵0.1
1. Gate
2. Drain
3. Source
1 2 3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)*
Total Power Dissipation (T
A
= 25 藲C)
Total Power Dissipation (T
C
= 25 藲C)
Channel Temperature
Storage Temperature
*
PW
鈮?/div>
10
碌
s, duty cycle
鈮?/div>
1 %
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
60
鹵20
鹵35
鹵140
2.0
30
150
鈥?5 to +150
V
V
A
A
W
W
藲C
藲C
MP-45F (ISOLATED TO-220)
Drain
Body
Diode
Gate
Gate Protection
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if voltage exceeding the rated voltage may
be applied to this device.
The information in this document is subject to change without notice.
Document No. D10515EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
漏
1996

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