鈥?/div>
Package Dimensions
unit : mm
2078C
[2SK2682LS]
10.0
3.2
3.5
7.2
Low ON-resistance.
High-speed diode.
Micaless package facilitating mounting.
4.5
2.8
16.1
16.0
3.6
0.9
1.2
14.0
1.2
0.75
1 2 3
2.4
0.7
Specifications
Absolute Maximum Ratings
at Ta=25擄C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW鈮?0碌s, duty cycle鈮?%
Tc=25擄C
Conditions
2.55
2.55
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
Ratings
250
鹵30
13
52
2
35
150
--55 to +150
Unit
V
V
A
A
W
W
擄C
擄C
Electrical Characteristics
at Ta=25擄C
Parameter
Drain-to-Source Breakdown Voltage
Gate-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Symbol
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
Conditions
ID=1mA, VGS=0
IG=鹵100碌A(chǔ), VGS=0
VDS=250V, VGS=0
VGS=鹵25V, VDS=0
VDS=10V, ID=1mA
2.0
Ratings
min
250
鹵30
1.0
鹵10
3.0
typ
max
Unit
V
V
mA
碌A(chǔ)
V
0.6
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1501 TS IM TA-3431 / N1500 TS IM TA-3044 No.6783-1/4
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