2SK2642-01MR
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High voltage
V
GS
=鹵35V Guarantee
Avalanche-proof
FUJI POWER MOS-FET
TO-220F15
2.54
Applications
Switching regulators
UPS
DC-DC converters
General purpose power amplifier
3. Source
Equivalent circuit schematic
Drain(D)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25擄C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Maximum Avalanche Energy
Max. power dissipation
Operating and storage
temperature range
Symbol
V
DS
I
D
I
D(puls]
V
GS
E
AV *1
P
D
T
ch
T
stg
Rating
500
鹵15
鹵60
鹵35
88.7
50
+150
-55 to +150
Unit
V
A
A
V
mJ
W
擄C
擄C
Gate(G)
Source(S)
*1 L=0.72mH, Vcc=50V
Electrical characteristics (T
c
=25擄C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
=1mA
V
GS
=0V
I
D
=1mA
V
DS
=V
GS
V
DS
=500V
V
GS
=0V
V
GS
=鹵35V V
DS
=0V
I
D
=7.5A V
GS
=10V
I
D
=7.5A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=300V I
D
=15A
V
GS
=10V
R
GS
=10
鈩?/div>
L=100碌H T
ch
=25擄C
I
F
=2xID V
GS
=0V T
ch
=25擄C
I
F
=ID V
GS
=0V
-di/dt=100A/碌s T
ch
=25擄C
15
1.1
500
8.0
1.65
Tch=25擄C
Tch=125擄C
Min.
500
3.5
Typ.
Max. Units
V
V
碌A(chǔ)
mA
nA
鈩?/div>
S
pF
4.5
4.0
4.5
10
500
0.2
1.0
10
100
0.44
0.55
9.0
1400
2100
250
380
110
170
30
50
110
170
90
140
55
90
ns
A
V
ns
碌C
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
2.50
62.5
Units
擄C/W
擄C/W
1
1
2
3
4
