2SK2618LS
N- Channel MOS Silicon FET
Very High-Speed Switching Applications
TENTATIVE
Features and Applications
鈥?Low ON-state resistance.
鈥?Low Qg
Absolute Maximum Ratings / Ta=25擄C
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable power Dissipation
Channel Temperature
Storage Temperature
Electrical Characteristics / Ta=25擄C
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source
on State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn-ON Delay Time
Rise Time
Turn-oFF Delay Time
Fall Time
Diode Forward Voltage
Switching Time Test Circuit
VDD=200V
PW=1碌S
D.C.鈮?.5%
VGS=15V
D
ID=3A
RL=66.7
16.1
VDSS
VGSS
ID
IDP
(Tc=25擄C)
PD
Tch
Tstg
500
鹵30
5
20
30
150
--55 to +150
min
unit
V
V
A
A
W
擄C
擄C
typ
max
1.0
鹵100
5.5
3.0
0.95
700
250
120
20
20
20
50
25
1.2
1.25
unit
V
mA
nA
V
S
鈩?/div>
pF
pF
pF
nC
ns
ns
ns
ns
V
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
Qg
td(on)
tr
td(off)
tf
VSD
ID=1mA
VDS=500V
VGS=鹵30V
VDS=10V
VDS=10V
ID=3A
VDS=20V
VDS=20V
VDS=20V
VDS=200V
GS=10V
, VGS=0
, VGS=0
, VDS=0
, ID=1mA
, ID=3A
, VGS=15V
,
,
,
,
f=1MHz
f=1MHz
f=1MHz
ID=5A
500
3.5
1.5
See Specified Test
Circuit
IS =5A
, VGS = 0
Case Outline
TO-220FI(LS)
(unit:mm)
10.0
3.5
蠁
3.2
4.5
2.8
7.2
16.0
VOUT
G
2SK2618LS
0.9
1.2
14.0
3.6
P.G
RGS
50鈩?/div>
S
1
2 3
0.75
Specifications and information herein are subject to change without notice.
2.55
2.55
SANYO Electric Co., Ltd. Semiconductor Business Headquarters
TOKYO OFFICE Ttokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
960329TM2fXHD
2.4
0.6
0.7
1
