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2SK2597 Datasheet

  • 2SK2597

  • N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz B...

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  • NEC   NEC

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PRELIMINARY DATA SHEET
SILICON POWER MOS FIELD EFFECT TRANSISTOR
2SK2597
N-CHANNEL SILICON POWER MOSFET
FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE
POWER AMPLIFICATION
FEATURES
鈥?High output, high gain
P
O
= 100 W, G
L
= 13 dB (TYP.) (f = 900 MHz)
P
O
= 90 W, G
L
= 12 dB (TYP.) (f = 960 MHz)
鈥?Low intermodulation distortion
鈥?Covers all base station frequencies such as 800-MHz PDC
and GSM
鈥?High-reliability gold electrodes
鈥?Hermetic sealed package
鈥?Internal matching circuit
鈥?Push-pull structure
PACKAGE DRAWING (Unit: mm)
45藲
G1
S
G2
45藲
蠁
3.3鹵0.3
11.4鹵0.3
19.4鹵0.4
D1
D2
1.4
3.2鹵0.2 鹵0.3 3.2鹵0.2
13.5鹵0.3
28.0鹵0.3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
擄
C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current (D.C.)
Total power dissipation
Thermal resistance
Channel temperature
Storage temperature
Symbol
V
DS
V
GS
I
D
P
T
R
th
T
ch
T
stg
Ratings
60
7
15
Note
290
0.6
200
鈥?5 to +150
Unit
V
0.1
2.5鹵0.2
V
A
W
藲C/W
藲C
藲C
21.5鹵0.3
Note
Per side
G
1
, G
2
: gate
D
1
, D
2
: drain
S
: source
Flange is connected to the source.
ELECTRICAL CHARACTERISTICS (T
A
= 25 藲C)
Parameter
Gate leakage current
Cut-off voltage
Drain current
Mutual conductance
Output power
Drain efficiency
Linear gain
Symbol
I
GSS
V
GS(off)
I
DSS
g
m
P
O
V
GS
= 7 V
V
DS
= 5 V, I
D
= 50 mA
V
DS
= 60 V
V
DS
= 5 V, I
D
= 3 A,
鈭咺
D
= 100 mA
f = 960 MHz, V
DD
= 30 V
I
DQ
= 200 mA
脳
2, P
in
= 40 dBm
f = 960 MHz, V
DD
= 30 V
I
DQ
= 200 mA
脳
2, P
in
= 30 dBm
Third intermodulation distortion
IM
3
f = 900 MHz,
鈭唂
= 0.1 MHz, V
DD
= 30 V
I
DQ
= 200 mA
脳
2, P
O
= 42 dBm
鈥?8
dBc
2.0
80
35
11
90
40
12
1.5
Condition
MIN.
TYP.
MAX.
1
4
2
Unit
碌
A
V
mA
S
W
%
dB
畏
D
G
L
The information in this document is subject to change without notice.
Document No. P10252EJ1V0DS00 (1st edition)
Date Published October 1995 P
Printed in Japan
漏
1.5鹵0.2
4.7MAX.
1995

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