Silicon Junction FETs (Small Signal)
2SK2593
Silicon N-Channel Junction FET
For low-frequency amplification
For switching
0.4
unit: mm
1.6鹵0.15
0.8鹵0.1
0.4
q
Low noies, high gain
q
High gate to drain voltage V
GDO
q
Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
1.6鹵0.1
1.0鹵0.1
0.5
1
0.5
3
2
0.45鹵0.1 0.3
0.75鹵0.15
s
Absolute Maximum Ratings
(Ta = 25擄C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Junction temperature
Storage temperature
Symbol
V
DSX
V
GDO
V
GSO
I
D
I
G
P
D
T
j
T
stg
Ratings
55
鈭?5
鈭?5
鹵30
10
125
125
鈭?5
to +125
Unit
V
V
V
mA
mA
mW
擄C
擄C
1: Source
2: Drain
3: Gate
EIAJ: SC-75
SS-Mini Type Package (3-pin)
Marking Symbol (Example): 2B
s
Electrical Characteristics
(Ta = 25擄C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Symbol
I
DSS*
I
GSS
V
GDS
V
GSC
| Y
fs
|
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
=
鈭?0V,
V
DS
= 0
I
G
=
鈭?00碌A(chǔ),
V
DS
= 0
V
DS
= 10V, I
D
= 10碌A(chǔ)
V
DS
= 10V, I
D
= 5mA, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DS
= 10V, V
GS
= 0, R
g
= 100k鈩?/div>
f = 100Hz
2.5
7.5
6.5
1.9
2.5
55
80
鈭?
min
1
typ
max
20
10
Unit
mA
nA
V
V
mS
pF
pF
dB
Input capacitance (Common Source) C
iss
Reverse transfer capacitance (Common Source) C
rss
Noise figure
NF
*
I
DSS
rank classification
Runk
I
DSS
(mA)
P
1 to 3
2BP
Q
2 to 6.5
2BQ
R
5 to 12
2BR
S
10 to 20
2BS
Marking Symbol
0 to 0.1
0.2鹵0.1
0.15
鈥?.05
+0.1
0.2
鈥?.05
+0.1
s
Features
1
1
2
3
