Power F-MOS FETs
2SK2573 (Tentative)
Silicon N-Channel Power F-MOS FET
s
Features
q
Avalanche energy capacity guaranteed
q
High-speed switching
q
Low ON-resistance
q
No secondary breakdown
4.5
unit: mm
15.5鹵0.5
蠁3.2鹵0.1
10.0
3.0鹵0.3
5藲
26.5鹵0.5
5藲
23.4
22.0鹵0.5
s
Applications
q
Contactless relay
q
Diving circuit for a solenoid
q
Driving circuit for a motor
q
Control equipment
q
Switching power supply
2.0 1.2
5藲
18.6鹵0.5
5藲
5藲
4.0
2.0鹵0.2
1.1鹵0.1
2.0
0.7鹵0.1
3.3鹵0.3
0.7鹵0.1
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
500
鹵30
鹵20
鹵40
20
100
3
150
鈭?5
to +150
Unit
V
V
A
A
mJ
W
擄C
擄C
5藲
5.5鹵0.3
s
Absolute Maximum Ratings
(T
C
= 25擄C)
5.45鹵0.3
5.45鹵0.3
1
2
3
1: Gate
2: Drain
3: Source
TOP-3E Package
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
*
T
C
= 25擄C
Ta = 25擄C
L = 0.1mH, I
L
= 20A, 1 pulse
s
Electrical Characteristics
(T
C
= 25擄C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
DSF
C
oss
t
on
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
Conditions
V
DS
= 400V, V
GS
= 0
V
GS
= 鹵20V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 25V, I
D
= 1mA
V
GS
= 10V, I
D
= 10A
V
DS
= 25V, I
D
= 10A
I
DR
= 20A, V
GS
= 0
3000
V
DS
= 20V, V
GS
= 0, f = 1MHz
430
175
V
DD
= 150V, I
D
= 10A
V
GS
= 10V, R
L
= 15鈩?/div>
150
140
480
1.25
41.67
7.2
500
1
0.32
12
鈭?.8
5
0.4
min
typ
max
100
鹵1
Unit
碌A
碌A
V
V
鈩?/div>
S
V
pF
pF
pF
ns
ns
ns
擄C/W
擄C/W
Input capacitance (Common Source) C
iss
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source) C
rss
Turn-on time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
2.0
1
1
2
3
