S TYP. (I
S TYP. (I
鈥?/div>
Includes diode and high resistance at G - S
0.8 鹵 0.1
G
0 to 0.1
D
0.2
+0.1
鈥?
0.5
0.5
0.6
0.75 鹵 0.05
S
ORDERING INFORMATION
PART NUMBER
2SK2552
PACKAGE
SC-75 (USM)
1.0
1.6 鹵 0.1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Drain to Source Voltage
Gate to Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Notes 1.
V
GS
= 鈥?.0 V
2.
Mounted on ceramic substrate of 3.0 cm x 0.64 mm
Remark
2
Note2
Note1
EQUIVALENT CIRCUIT
20
鈥?0
10
10
200
125
鈥?5 to +125
V
V
mA
mA
mW
擄C
擄C
Source
Gate
Drain
V
DSX
V
GDO
I
D
I
G
P
T
T
j
T
stg
Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D15941EJ1V0DS00 (1st edition)
Date Published January 2002 NS CP(K)
Printed in Japan
漏
2002